Nanowires Used In Novel Hybrid Transistor - New Technology

Sponsored by Helmholtz-Zentrum Berlin fur Materialien und EnergieDec 15 2003

German physicists, Jie Chen and Rolf Könenkamp at the Hahn-Meitner Institute in Berlin, have reported in Applied Physics Letters their development of a new type of transistor. The transistor is a ‘hybrid’ structure but it manages to avoid the strength limitations of most hybrid devices.

The transistor consists of a polymer-metal-polymer stack of a metal layer sandwiched between two 8 micron thick polymer films. Fast-ion irradiation was used to drill holes in the stack before semiconductor nanowires were grown in the holes. The nanowires each had a diameter of about 100 nanometres. Source and drain contacts were added to the top and bottom of the stack allowing it to act as a transistor, with the metal layer in the middle as the gate electrode.

Posted 1^st July 2003

Citations

Please use one of the following formats to cite this article in your essay, paper or report:

APA
Helmholtz-Zentrum Berlin fur Materialien und Energie. (2016, October 11). Nanowires Used In Novel Hybrid Transistor - New Technology. AZoNano. Retrieved on April 23, 2024 from https://www.azonano.com/article.aspx?ArticleID=307.
MLA
Helmholtz-Zentrum Berlin fur Materialien und Energie. "Nanowires Used In Novel Hybrid Transistor - New Technology". AZoNano. 23 April 2024. <https://www.azonano.com/article.aspx?ArticleID=307>.
Chicago
Helmholtz-Zentrum Berlin fur Materialien und Energie. "Nanowires Used In Novel Hybrid Transistor - New Technology". AZoNano. https://www.azonano.com/article.aspx?ArticleID=307. (accessed April 23, 2024).
Harvard
Helmholtz-Zentrum Berlin fur Materialien und Energie. 2016. Nanowires Used In Novel Hybrid Transistor - New Technology. AZoNano, viewed 23 April 2024, https://www.azonano.com/article.aspx?ArticleID=307.