Gallium Arsenide (GaAs) Nanoparticles - Properties, Applications

Topics Covered

Introduction
Chemical Properties
Physical Properties
Thermal Properties
Manufacturing Process
Applications

Introduction

Nanoparticle research is currently one of the most active branches of science with many of applications in various fields.

This article discusses the properties and applications of gallium arsenide nanoparticles. Gallium is a Block P, Period 4 element, while arsenic is a Block P, Period 4 element.

Gallium arsenide is a semiconductor with excellent electronic properties. The morphology of gallium arsenide nanoparticles is gray cubic crystals. Gallium arsenide nanoparticles are graded as toxic and dangerous for the environment.

Chemical Properties

The chemical properties of gallium arsenide nanoparticles are outlined in the following table.

Chemical Data
Chemical symbol GaAs
CAS No. 1303-00-0
Group Gallium 13
Arsenic 15
Electronic configuration Gallium [Ar] 3d10 4s2 4p1
Arsenic [Ar] 3d10 4s2 4p3
Chemical Composition
Element Content (%)
Gallium 48.2
Arsenic 51.79

Physical Properties

The physical properties of gallium arsenide nanoparticles are given in the following table.

Properties Metric Imperial
Density 5.31 g/cm3 0.191 lb/in3
Molar mass 144.64 g/mol -

Thermal Properties

The thermal properties of gallium arsenide nanoparticles are provided in the table below.

Properties Metric Imperial
Melting point 1238 °C 2260 °F

Manufacturing Process

Gallium arsenide nanoparticles can be manufactured from GaCl3 and As (NMe2)3 in 4-ethylpyridine.

Applications

The key applications of gallium arsenide nanoparticles are listed below:

  • In the manufacture of devices such as monolithic microwave integrated circuits, infrared light-emitting diodes, microwave frequency integrated circuits, solar cells, laser diodes, and optical windows
  • Gallium arsenide nanowires can be used for high technology applications such as electronics, optics, and photovoltaics.

Source: AZoNano

 

Date Added: Apr 8, 2013 | Updated: Jul 12, 2013
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