NEW system for electron beam direct write. Improved stability, a new Digital Pattern Generator and an ultra-high resolution electron optics result in new specifications.
The RAITH150-TWO is the primary choice of Nano Research Centres for ultra high resolution patterning in the nanometer range and complex applications on masks and wafers up to 8 inch. A 20-MHz pattern generator using optimized pattern filling modes shortens exposure times. Stability is improved by newly designed shielding with independant temperature control.
The RAITH150-TWO utilizes the latest developments in electron optics technology. A unique cross-over-free beam path gives extremely high beam current densities of about 20,000 A/cm2 delivering ultra-high patterning resolution in combination with increased lithography throughput.
- Mix-and-match with optical lithography
- Advanced device prototyping
- Exposures on wafers and masks
- Template manufacturing