The Model FWPX is a versatile cryogenic micro-manipulated probe station used for nondestructive testing of devices on full and partial wafers up to 102 mm (4 in) in diameter. The FWPX cryogenic probe station is a platform for measurement of electrical, electro-optical, parametric, high Z, DC, RF, and microwave properties of materials and test devices. Nanoscale electronics, quantum wires and dots, and semiconductors are typical materials measured in a FWPX. A wide selection of probes, cables, sample holders, and options makes it possible to configure the FWPX to meet your specific measurement applications.
The FWPX operates over a temperature range of 4.5 K to 475 K. With options, the base temperature can be extended down to 3.5 K. The probe station provides efficient temperature operation and control with a continuous refrigeration system using either helium or nitrogen. Vapor-cooled shielding optimizes efficiency and intercepts blackbody radiation before it reaches the sample. Two control heaters on the sample stage minimize temperature gradients across the sample and, along with the radiation shield heater, provide the probe station with fast thermal response.
The FWPX is user-configured with up to six ultra-stable micro-manipulated stages, each providing precise 3-axis control of the probe position to accurately land the probe tip on device features. The sample stage provides in-plane translation and rotation to allow alignment of patterns with stage axes. Proprietary probe tips in a variety of sizes and materials minimize thermal mass and optimize electrical contacts to the device under test (DUT). Probe tips are thermally linked to the sample stage to minimize heat transfer to the DUT.
For increased versatility, FWPX options include a 3.5 K base temperature stage, LN2 Dewar kit, pump line vibration isolator, higher magnification microscope, vacuum turbo pumping system, and fiber optic probe arm modification.
Key Feature
Key features of Model FWPX Cryogenic Probe Station include:
- High stability operation from 3.5 K to 475 K
- Measurements from DC to 67 GHz
- Accommodates up to 102 mm (4 in) diameter wafers
- Configurable with up to six thermally anchored micro-manipulated probe arms
- Probe arms with 3-axis adjustments and ±5° theta planarization
- Sample stage with in-plane translation and ±5° in-plane rotation
- Cables, shields, and guards minimize electrical noise and thermal radiation losses
- Options and accessories for customization to specific research needs