Automated Ion-Beam Etching System – Caroline IE12 from ESTO-Vacuum

Caroline IE12 system available from ESTO is specifically designed for ion beam etching of dielectric and metal films deposited on ceramic, silicon or any flat substrates with a thickness of less than 30mm and diameter of less than 150mm. Maximum surface processing is 150x320mm.

The IE12 system includes two linear ion sources with the beam size of 350mm. The sources are placed vertically and enable etching via metallic or photoresistive mask.

Key Features

The main features of the Caroline IE12 system are:

  • Vertical placement of substrates on the drum
  • Vertical ion source placement
  • Gas consumption control in each channel and two-channel gas flow rate stabilization
  • Control of the etching process based on deposition time
  • Full etching automation from loading to unloading of substrates
  • Easy-to-install substrates holders for fast loading and unloading operations
  • Large rectangular vacuum chamber door allows for easy holders changing
  • Stock high vacuum cryopump can be substituted with diffusion or turbomolecular pumps

Applications

The applications of the Caroline IE12 system are:

  • Resistive films etching, such as PC-5406, PC-3710 and PC-1004 films
  • Metal film etching, including copper and gold films
  • Dielectric films etching
  • Tantalum and titanium films etching, and etching of corresponding oxides and nitrides films
  • Silicon nitride and silicon dioxide films etching
  • Argon ion beam etching of any surface
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