Research and
Markets, the leading source for international market research and market
data, has announced the addition of Pan Stanford Publishing Pte. Ltd.'s new
report "Nanometer
CMOS" to their offering.
This book gives a comprehensive overview of all the important issues concerning
modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling
issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer
MOSFETs as well as non-classical MOSFET concepts, which receive little coverage
in textbooks, are treated in detail. The device structures, merits, and drawbacks
of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and
multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented.
An entire chapter is devoted to the emerging and rapidly growing field of RF
MOSFETs/RF CMOS, and the discussion extends to the important future trends in
of nanometer CMOS technology and the problems and limits of scaling.
Readership: Graduates and postgraduate students, researchers, engineers and
managers in the fields of electrical & electronic engineering and nanoelectronics
& microelectronics.
Key Topics Covered:
Evolution and Recent Advances in Si Electronics
MOSFET Fundamentals, Theory, and Modeling
Nanometer MOSFETs
RF MOSFETs
Overview of Nanometer CMOS Technology
Challenges of Giga-Scale Integration
For more information visit http://www.researchandmarkets.com/research/f10c57/nanometer_cmos
Posted November 4th, 2009
