Samsung Electronics
today announced that its new Semiconductor Research + Development Center
has started advanced logic process development, an important part of Samsung's
drive in the foundry business. The Semiconductor R+D center brings together
Samsung's advanced logic and memory process research teams into one organization
to realize synergies in various areas including new materials, transistor structures,
and early access to leading edge process equipment. This will enable Samsung's
foundry customers to deliver industry leading silicon solutions that are optimized
for performance, power consumption and area.
Samsung Foundry, one of the key growth engines of Samsung Electronics, offers
advanced logic process manufacturing to leading fabless and IDM companies. Currently
in mass production at 45 nanometer (nm), Samsung is also preparing next generation
32-/28-nm and beyond process technologies through its continued participation
in the IBM Technology Alliance.
“Samsung has made significant progress in the foundry business this year,
with new customer signings and good technical results on our most advanced nodes,”
said Dr. Stephen Woo, executive vice president and general manager of Samsung
Electronics' System LSI Division. “The Semiconductor R+D Center
will significantly increase the resources focused on foundry logic process technology
and will work with our current logic process development team to develop the
most advanced process nodes. This way we maintain focus on meeting the needs
of our foundry customers whilst also leveraging the world's leading expertise
in memory.”
The Semiconductor R+D center is focused on next generation semiconductor
process development for both memory and logic applications, including sub-28nm
process technology. At these advanced nodes, Samsung will leverage memory process
development advancements to foundry logic process development and vice versa.
Expected synergies include a broad spectrum of technologies including High-K,
3D transistors, and advanced lithography such as extreme ultra violet (EUV),
which Samsung is a leader in. Additionally, Samsung's Semiconductor R+D
center is developing innovative interconnect and packaging solutions for these
deep sub-micron technology nodes including through silicon via (TSV), where
vertically stacked chips are connected with through silicon vias to enhance
speed and performance.
“High-performance and low power are no longer mutually exclusive,”
said Dr. Kinam Kim, executive vice president and general manager of Samsung
Electronics' Semiconductor R+D Center. “There is critical R+D
work to be done at the most advanced process nodes with regards to minimizing
power consumption while incorporating a feature rich menu of devices for designers
to create innovative next-generation mobile and high performance SoC devices.
Samsung is addressing this and other design needs head-on by increasing our
focus on logic process advancements while taking advantage of know-how gained
in memory.”
The research efforts at this R+D center will complement other consortiums
and joint development activities, including not only the IBM Technology Alliance,
but also Samsung's participation in IMEC and Sematech.
Posted November 4th, 2009
