Instruments excited to announce the launch of CrystalFlex. This multi-wafer
Hydride Vapour Phase Epitaxy (HVPE) reactor provides superb epitaxial growth
control, and offers a cost effective route for the production of high quality,
crack free epitaxial GaN, AlGaN and AlN single crystal materials.
As a world leading company we boast over 25 years experience in the development
of HVPE processes and techniques for the production of novel Group III nitrides
This equipment is designed for R&D or full scale production of Group III
nitrides with the focus on process stability, reproducibility, and optimal source
materials usage. The flexible reactor configuration enables end users to grow
a variety of Group III nitrides with various thicknesses.