Taiwan Semiconductor Manufacturing
Company, Ltd. (TWSE: 2330, NYSE: TSM) today announced the foundry segment's
first functional 65-nanometer (nm) multi-time programmable (MTP) non-volatile
memory (NVM) process technology. The technology incorporates process-qualified
MTP IP blocks jointly developed with Virage Logic. The new technology is the
first 2.5 volt MTP process, breaking the heretofore 3.3 volt baseline barrier.
It eliminates the need for an external EEPROM currently in many systems applications,
thereby reducing power, area and costs while increasing data security.
Built on TSMC's 65nm Low Power (LP) process, the new MTP technology features
up to 8k bits memory size that is ideal for small memory requirements associated
with MP3 music downloadable digital rights management, RFID devices, fingerprint
identification applications, and pre-paid cash or phone cards.
The 65nm MTP process is built up to 10 metal layers using copper low-k interconnects
and nickel silicide transistor interconnects. The technology is fully logic-compatible
and the NVM memory requires no additional processes or masks. Devices built
using the process will support full read and program operations across temperatures
ranging from -40 degrees C to 125 degrees C, with minimum 10-year data retention
at 125 degrees C.
"With inputs from customers' design needs, we are convinced this 65nm process
is well-suited for applications that require a small memory footprint on a leading
edge manufacturing technology," explains Jason Chen, vice president Worldwide
Sales and Marketing for TSMC.
"TSMC and Virage Logic have worked together on the 65nm MTP process to
bring true multi-time NVM programmability to such market segments as security
and wireless where advanced process adoption is crucial," said Dr. Yankin
Tanurhan, vice president and general manager, NVM Solutions, Virage Logic. "Because
AEON is based on a standard logic CMOS process, it requires no additional masks
or processes which eliminates the costly manufacturing steps normally involved
with floating gate memory while reducing the engineering effort and associated
costs of integrating NVM into SoC designs."
TSMC 65nm Process Technology
Since TSMC first announced commercial availability of its 65nm process in 2006,
the company has shipped over 700,000 12-inch wafers manufactured in its Fab
12 and Fab 14. The full 65nm process node includes logic, mixed-signal, R/F,
and high-density memory options and supports a broad range of computing, communications,
and consumer electronics applications.
The 65nm LP process is ideal for cellular baseband, as well as portable applications
and multimedia processors. The 65nm general-purpose (G) process targets graphics,
networking and high-end ASIC fabrication, while the high-speed process is intended
for CPU and advanced graphics processors. The 65nm LP plus G process that offers
both low power and general purpose devices on the same wafer, supports wireless
and portable applications requiring both low power and high performance.
TSMC's 65nm node also supports an embedded DRAM option for high bandwidth, fast
data rate designs found in high-speed consumer applications and in very small
form factor handheld devices.
All TSMC 65nm processes are supported by the company's Design Support Ecosystem
featuring DFM-compliant products and services; by TSMC Reference Flow design
methodology; and by a variety of process-proven TSMC and third party IP libraries
including a memory compiler, I/O and standard cell libraries.