Dow Corning and AIXTRON
AG today announced that Dow Corning is extending its SiC epitaxy capabilities
with the latest generation AIXTRON Planetary Reactor platform AIX 2800G4 WW
for 10x100 mm and future 6x150 mm SiC wafers. The reactor is planned to be commissioned
in the second quarter 2010.
Mark Loboda, Science and Technology Manager, Dow Corning Compound Semiconductor
Solutions, said, “After a rigorous review, we selected the AIXTRON system
to enable us to deliver the morphology, defect density and uniformity required
by our customers. The added capacity and capability up to 150mm will allow us
to meet our customer's rapidly growing needs for high power SiC device production.”
Dr. Frank Wischmeyer, Vice President and Managing Director, AIXTRON AB, Sweden,
added: “Building on over 10 years of experience with our SiC Hot-Wall
Planetary Reactor technology, we are able to offer the proven next generation
SiC AIX 2800G4 WW epitaxial production system. The enhanced productivity of
the system is due to design features such as a central water cooled triple gas
injector, improved process robustness and simplified maintenance procedures.
Based on AIXTRON’s proven IC design, the AIX 2800G4 WW system shares a
common platform with over 300 installed systems worldwide. AIXTRON is pleased
to partner with Dow Corning Compound Semiconductor Solutions as they advance
SiC devices into high volume low cost manufacturing.”
The term Planetary Reactor® is a registered trademark.