On December 8, in Baltimore, Maryland, Applied
Materials, the global leader in Nanomanufacturing Technology™ solutions
with a broad portfolio of innovative equipment, service and software products
for the fabrication of semiconductor chips, flat panel displays, solar photovoltaic
cells, flexible electronics and energy efficient glass., will host an important
symposium exploring critical questions surrounding the industry’s capability
to deliver the density and performance required to satisfy the ever-growing
demand for higher capacity flash memory chips. Can conventional floating-gate
technology remain viable beyond 22nm, or will three-dimensional charge trap
or nanocrystal cell technology win out? What will these new structures look
like and what new processes and materials will be needed to implement them?
Titled “How will NAND Flash Scale Beyond 2X?”, the symposium will
feature a stimulating panel discussion with leading technologists from across
the flash memory industry. The panel will debate the challenges facing flash
scaling and share their vision of how the industry landscape will evolve as
we enter a new decade.
Panel:
- Yoshio Nishi, Stanford University, Moderator
- Hideaki Aochi – Toshiba Corp.
- Seiichi Aritome – Hynix Semiconductor, Inc.
- Siyoung Choi – Samsung Microelectronics, Ltd.
- Kirk Prall – Micron Technology, Inc.
- Hans Stork – Applied Materials
For more information on this exciting event, please visit: http://www.appliedmaterials.com/sub22nm_panel/.