On December 8, in Baltimore, Maryland, Applied
Materials will host an important symposium exploring critical questions
surrounding the industry's capability to deliver the density and performance
required to satisfy the ever-growing demand for higher capacity flash memory
chips. Can conventional floating-gate technology remain viable beyond 22nm,
or will three-dimensional charge trap or nanocrystal cell technology win out?
What will these new structures look like and what new processes and materials
will be needed to implement them?
Titled “How will NAND Flash Scale Beyond 2X?”, the symposium will
feature a stimulating panel discussion with leading technologists from across
the flash memory industry. The panel will debate the challenges facing flash
scaling and share their vision of how the industry landscape will evolve as
we enter a new decade.
Panel: Yoshio Nishi, Stanford University, Moderator
Hideaki Aochi – Toshiba Corp.
Seiichi Aritome – Hynix Semiconductor, Inc.
Siyoung Choi – Samsung Microelectronics, Ltd.
Kirk Prall – Micron Technology, Inc.
Hans Stork – Applied Materials
Where: Baltimore Marriott Inner Harbor at Camden Yards
110 South Eutaw Street, Baltimore, Maryland 21201
When: Tuesday, December 8, 2009
Schedule: 5:15pm-6:15pm Registration and Reception
6:15pm-7:30pm Panel Discussion
For more information on this exciting event, please visit: http://www.appliedmaterials.com/sub22nm_panel/.
Applied Materials, Inc. (Nasdaq:AMAT) is the global leader in Nanomanufacturing
Technology™ solutions with a broad portfolio of innovative equipment,
service and software products for the fabrication of semiconductor chips, flat
panel displays, solar photovoltaic cells, flexible electronics and energy efficient
glass. At Applied Materials, we apply Nanomanufacturing Technology to improve
the way people live.