Site Sponsors
  • Oxford Instruments Nanoanalysis - X-Max Large Area Analytical EDS SDD
  • Park Systems - Manufacturer of a complete range of AFM solutions
  • Strem Chemicals - Nanomaterials for R&D
  • Technical Sales Solutions - 5% off any SEM, TEM, FIB or Dual Beam

Raith Installs New ionLiNE at Tel Aviv University

Published on April 27, 2010 at 7:13 AM

Raith GmbH a leading provider of Nano-Structuring and Lithography systems, announced today the installation of a novel solution based on Raith's successful e-Line Electron Beam Lithography systems and their new Nano-FIB ion source and focused ion optics, at The Center for Nanoscience and Nanotechnology, Tel Aviv University, Israel. TAU will use the new ionLiNE - ion beam lithography system (IBL) to develop and extend its existing EBL facilities for advanced nano-prototyping applications.

'EBL has been the benchmark for Nano-prototyping research for many years - combining speed with the established resist based nano-fabrication processing required for advanced research. By adding the complimentary technique of ion beam lithography, we will be able to extend the capabilities of our lithography process beyond the conventional limits, and investigate novel processes, giving higher levels of performance, both with and without the use of resist. The TAU Center for Nanoscience and Nanotechnology serves many collaborative partners within the University and external to it.

IBL is the natural compliment to EBL, adding automated three dimensional patterning, but while utilising all the standard design tools and layer patterning processes that are well understood for EBL. In addition to the delivery of one of the first ionLiNE IBL instruments, TAU and Raith have signed a joint development agreement to develop new IBL protocols for nano-prototyping applications for this emerging technique.' said Ori Cheshnovsky, head of the The Center for Nanoscience and Nanotechnology at TAU.

' This is the first time that applications which do not require ion beam imaging as the first step, such as small wafer level patterning, automated nanometer precision pattern placement and large area pattern stitching, which are effectively unknown within the conventional ion beam community, may be routinely performed. IBL solves these problems by applying true and tested, write field stitching capabilities, made possible by laser interferometer stage technology, to the versatile and direct write technique of ion beam patterning' said Lloyd Peto - Senior sales manager for ion beam lithography at Raith GmbH.

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Submit