16 papers with imec authors were accepted for IEEE International Electron Devices Meeting (IEDM), December 6-8, 2010, in San Francisco. Both ITRS-related as well as More-than-Moore-related research papers have been accepted, rewarding imec’s multidisciplinary R&D platform (featuring two state-of-the-art R&D fabs).
With 11 papers on ITRS scaling topics, imec will discuss a significant contribution to the fundamental understanding on the switching behavior and operation in advanced memory concepts (i.e. resistive RAM (RRAM) devices), among other topics. This has been achieved by applying imec’s longstanding expertise in logic MOS and high-k/metal gate reliability. It demonstrates the power of leveraging expertise from various domains in a flexible manner.
A 2nd highlight demonstrates imec’s continued progress on 3D-through-silicon via (TSV) technology, which is at the forefront of new and enabling ITRS technologies. The paper reports important characterization data of a two-die stacked device combining TSV with high-k/metal gate devices.
In addition, 5 More-than-Moore related topics will be presented at IEDM, covering GaN technology, Si high-voltage devices and MEMS technologies. One particular result is the realization of a high performance MEMS device together with one of our industrial core partners. Imec’s MEMS R&D expertise was applied to provide an industry-relevant solution.