AIXTRON AG today announced
that in the second quarter of 2010, Formosa Epitaxy Inc. (FOREPI), placed an
order for a 56x2-inch AIX G5 HT MOCVD reactor which will be used for ultra-high
brightness (UHB) GaN-based LEDs. Planned to be shipped in the fourth quarter
of 2010 it will join FOREPI’s multiple high throughput Planetary Reactor
systems at the company’s state-of-the-art facility in Lung-Tan, Taoyuan,
FOREPI President Dr. Fen-Ren Chien comments: “This is our company’s
first AIX G5 HT system, allowing us to smoothly transfer our process recipes
to a new reactor. Once this is proven we can look forward to the purchase of
more systems for production.
The reason why the AIXTRON system was chosen comes down to the all round excellent
performance of our existing systems like the G4 and CRIUS. Hence we have a strong
interest in acquiring AIXTRON´s recently launched products – such
as the G5 and the CRIUS II. Following successful recipe transfer, FOREPI will
exercise all the advantages that we can get from the G5 system, having already
demonstrated high quality GaN deposition at very high growth rates and high
pressure above 600 mbar resulting in superior GaN/InGaN uniformities."
The G5 provides advanced production solutions for the manufacturer, exactly
meeting the demanding market requirements on performance and productivity. Special
features include a new high growth rate injector, a graphite ceiling, as well
as the EqiSat, enabling identical surface temperatures on all satellites/wafers,
thus further improving process yield.
For over ten years, FOREPI has focused on pure-play manufacture of high power
InGaN LED wafers and chips and has been a long-time user of AIXTRON systems
for advanced high performance HB-LED product manufacture. It set its sights
on meeting the needs of high end applications such as LCD TV backlighting and
today’s current strong demand proved the correctness of that strategy.
The term CRIUS® is a registered trademark.