Site Sponsors
  • Strem Chemicals - Nanomaterials for R&D
  • Oxford Instruments Nanoanalysis - X-Max Large Area Analytical EDS SDD
  • Park Systems - Manufacturer of a complete range of AFM solutions
Posted in | Nanoelectronics

SEMATECH, 4DS to Collaborate on Development of Non-Volatile Memory Technology

Published on April 18, 2011 at 8:10 AM

By Cameron Chai

4DS, a Silicon Valley company that develops RRAM technology, has enrolled in SEMATECH's Front End Processes (FEP) to collaborate on projects in non-volatile memory technology development.

The company will work closely with engineers from SEMATECH's memory program to develop a transistor-memory to create a working sample of a power efficient RRAM device based on its in-house material processes and device designs.

RRAM is a non-volatile memory suitable for global industrial and academic projects. It can be used instead of flash memory and could enhance non-volatile memory applications because of its speed, low power consumption and scaling.

The platform operates at low temperature and is compatible with CMOS, back end of line (BEOL) process featuring an uncomplicated structure needing few mask steps. It is power efficient and writes fast. The research team included Silicon Valley experts in material science, processing, equipment and memory device engineering.

Chief Scientist at 4DS, Dongmin Chen, who is a nanoscale quantum physicist and former Harvard Rowland Institute Fellow, the partnership will help validate the company’s nanotechnology portfolio.

Source: http://www.4-d-s.com

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Submit