LG Siltron, an epi wafer manufacturer based in South Korea, has chosen Veeco Instruments’ gallium nitride metal organic chemical vapor deposition (MOCVD) system called TurboDisc K465i for manufacturing gallium nitride on silicon (GaN-on-Si) wafers for use in LED devices and power electronics.
Gallium nitride is now becoming the choice material to deliver low-cost rapid energy conversion, as conventional silicon-based power transistors are nearing their limits. A broad array of industries that include green technologies such as smart grid, solar, wind and hybrid electric vehicles are accelerating demand for energy-efficient power electronics based on gallium nitride. GaN-on-Si may also provide an optional approach for producing LEDs.
According to LG Siltron R&D’s General Manager, Dr. Hee Bog Kang, the TurboDisc K465i MOCVD System is the company’s first GaN-on-Si wafer manufacturing system. Besides providing unprecedented throughput benefits, the novel system’s TurboDisc technology offers higher homogeny and low particle count, which is a key for manufacturing GaN-on-Si wafers. The company is grateful for Veeco Instruments’ strong support and expects more such future partnerships, Kang added.
The Executive Vice President of Process Equipment at Veeco Instruments, William J. Miller stated that the company is happy about the selection of its K465i by LG Siltron. The K465i offers superior yields and low cost-of-ownership. The GaN-on-Si power device market is growing continuously and the K465i offers several benefits, including improved productivity, lower production costs and enhanced device performance.