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Epistar to Use Veeco’s MOCVD Tool for GaN-on-Si LED Development

Published on February 8, 2012 at 1:35 AM

By Cameron Chai

Veeco Instruments, a manufacturer of process equipment for developing and producing hard disk drives, solar cells, LEDs and other devices, has announced the selection of its gallium nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System called TurboDisc K465i by Epistar for growing light emitting diodes (LEDs) on silicon substrates.

TurboDisc K465i GaN MOCVD System

Epistar is a Taiwanese manufacturer of compact LEDs that consume less power and have high brightness and long operating life. The company offers full spectrum of high brightness LEDs. These LEDs are commonly utilized in traffic signals, indoor/outdoor displays, indicators for several consumer electronic devices, LCD backlighting, automotive exterior and interior lighting, scanner lighting, fax machines and as light sources for general lighting.

Epistar’s President, M. J. Jou stated that the company is happy to select Veeco Instruments’ TurboDisc K465i as its GaN-on-Si development system. Since the company is shifting to larger wafer sizes, it is pleased about the prospects of GaN-on-Si technology, Jou added.

The Executive Vice President of Process Equipment at Veeco Instruments, William J. Miller stated that the company is excited about the selection of its TurboDisc K465i by Epistar. The K465i offers production value and low cost-of-ownership for Epistar’s GaN-on-Si LED development. Large diameter silicon wafers are the promising low-cost replacement to sapphire for mass-production of inexpensive LEDs, Miller concluded.

Source: http://www.veeco.com/

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