Diamond Coated Wafers From Advanced Diamond Technologies

Published on July 17, 2007 at 10:04 AM

Advanced Diamond Technologies, Inc. (ADT), the world leader in developing and applying diamond films for industrial, electronic, and mechanical applications unveils new varieties in its product line of diamond coated wafers for accelerating the development of MEMS and electronic devices at SEMICON West 2007, July 17-19, 2007, in San Francisco, CA.

ADT's new products include Diamond on Insulator (DOI(TM)) wafers, an extension of its Diamond on Silicon (DoSi(TM)) wafers made from the vapor deposition of ADT's phase-pure ultrananocrystalline diamond (UNCD(R)) on silicon wafers. The DoSi wafer products received Frost and Sullivan's 2006 Product Innovation of the Year award for diamond films.

UNCD DOI wafers serve as platforms to test device concepts and develop processes to enable wafer-scale diamond applications across a broad spectrum of products including MEMS and electronics. ADT's advancement, at last, makes diamond an engineering material suitable for volume production of many types of devices.

"We believe that a reliable supply of our commercial grade diamond coated wafers will stimulate the development of diamond MEMS and electronic devices. Today's product launch brings diamond MEMS devices one step closer to volume production-making diamond as an engineering material a reality," said ADT president Neil Kane.

ADT is also pleased to announce the award of a Phase I Small Business Innovation Research (SBIR) grant from the National Science Foundation (NSF) for the development of "Starter Wafers for Diamond MEMS Fabrication."

"This project allows us to further expand the UNCD DOI product line by demonstrating the integration of other common MEMS materials such as metals, nitrides, and complex oxides with UNCD. We will show that diamond wafers with outstanding uniformity can be manufactured in sizes up to 200 mm and meet MEMS foundry standards for cleanliness and reproducibility," said ADT chief technical officer Dr. John Carlisle.

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