American Elements announced the
further expansion of its hafnium separation and production facilities
to meet growing demand for the metal, hafnium oxide and other hafnium
containing engineered and advanced materials.
The new production capacity will affect deliveries beginning
in Q4 2007 however orders from existing and new customers for
deliveries in October are being processed now. This will expand
American Elements' production of all hafnium products including hafnium
metal and alloys, hafnium oxide, other hafnium compounds, such as
hafnium chloride, hafnium carbide and hafnium nitrate, crystal
materials such as hafnium telluride and hafnium selenide, and thin film
coating materials for evaporation and deposition such as hafnium
sputtering targets, hafnium rod, pellets and foil.
This expanded availability of hafnium forms will advance the
use of hafnium to replace polysilicon as the principle gate or
electrode in metal oxide semiconductor field effect transistors
(MOSFETs) and the development of high-k materials which can function as
di-electric gates smaller than 10 angstroms.