SEMATECH and International
SEMATECH Manufacturing Initiative (ISMI) experts will present world-leading
research and development results on extreme ultraviolet (EUV) manufacturability
and extendibility, alternative lithography, and related areas of metrology at
the SPIE Advanced Lithography 2009 conferences on February 22-27 at the San
Jose Convention Center and Marriott in San Jose, CA.
SEMATECH engineers will report their progress on assessing EUV lithography
(EUVL) manufacturability and on advancing EUVL extendibility and alternative
lithography and will showcase some of their findings in 12 papers demonstrating
breakthrough results in exposure tool capability, resist advances, defect-related
inspection, reticle handling, and nanoimprint.
"We are enthusiastic about sharing our progress on some of the most critical
determiners for the development of EUV infrastructure," said Bryan Rice,
director of lithography at SEMATECH. "SEMATECH's leadership in enabling
EUVL pilot line readiness and in researching new techniques for advancing EUV
extendibility and alternative lithography, coupled with access to the full-field
exposure tool, located at the University at Albany's College of Nanoscale Science
and Engineering, demonstrate how our research continues to support EUV readiness
for the 22 nm half-pitch node."
In addition to the EUV results, ISMI engineers will present on critical dimension-scanning
electron microscopy (CD-SEM) metrology and process control. ISMI's metrology
program is focused on the 32 nm and 22 nm generations, to facilitate lithographic
innovation, improve manufacturing productivity, and reduce manufacturing costs.