Electro Scientific Industries,
Inc. (Nasdaq:ESIO), a leading provider of world-class photonic and laser
systems for microengineering applications, today introduced its Model 9850 Tailored
Pulse(TP) Laser Link Processing System and received qualification from Tera
Probe, Inc.-a Japan-based wafer testing provider. Built on ESI's dual-beam 9850
platform, the 9850TP combines a proprietary tailored pulsed laser to deliver
the highest throughput and process flexibility for the latest generation of
memory devices, and will be deployed for 68nm and future DRAM repair applications.
“Our Hiroshima Operation Center provides Japan’s only on-site operation
services for DRAM wafer testing,” explained Mr. Tsuyoshi Yokoyama, chief
production officer, at Tera Probe, Inc. “Continued technological development
is critical to continuing DRAM shrink roadmap and improving memory performance.
ESI’s 9850TP laser system provided us with the maximum process flexibility
with high throughput. We look forward to the further improvement with laser
technology that enables greater yield and higher levels of reliability.”
“The 9850TP’s introduction and qualification from Tera Probe demonstrate
ESI's continued commitment to technology development in memory repair,”
noted Nick Konidaris, president and CEO of ESI. “It also confirms that
ESI’s strong relationships allow us to work closely with customers to
develop innovative solutions. In spite of the memory downturn, we know our customers
will stay competitive by investing in selected key technologies. Leveraging
our strong intellectual property ownership in temporal pulse shaping, ESI provides
valued customers like Tera Probe with advanced memory repair solutions.”
ESI’s Model 9850TP Laser Link Processing System is the latest solution
in ESI's dual-beam 9850 platform and is designed to meet the production needs
of a variety of DRAM, FLASH and embedded memory devices. The system features
ESI’s proprietary tailored pulse laser technology. The 9850TP’s
laser pulse temporal profile has been optimized to provide a high peak energy
with a fast rise time that ruptures the overlying fuse dielectric quickly and
efficiently. With two independently steered beams, operating in conjunction
with the high velocity stage, the 9850TP raises the industry standard in terms
of cost-of-ownership, yield, throughput and reliability on increasingly complex
memory devices.