Markets, the leading source for international market research and market
data, has announced the addition of Pan Stanford Publishing Pte. Ltd.'s new
CMOS" to their offering.
This book gives a comprehensive overview of all the important issues concerning
modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling
issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer
MOSFETs as well as non-classical MOSFET concepts, which receive little coverage
in textbooks, are treated in detail. The device structures, merits, and drawbacks
of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and
multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented.
An entire chapter is devoted to the emerging and rapidly growing field of RF
MOSFETs/RF CMOS, and the discussion extends to the important future trends in
of nanometer CMOS technology and the problems and limits of scaling.
Readership: Graduates and postgraduate students, researchers, engineers and
managers in the fields of electrical & electronic engineering and nanoelectronics
Key Topics Covered:
Evolution and Recent Advances in Si Electronics
MOSFET Fundamentals, Theory, and Modeling
Overview of Nanometer CMOS Technology
Challenges of Giga-Scale Integration
For more information visit http://www.researchandmarkets.com/research/f10c57/nanometer_cmos