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Comprehensive Overview of Important Issues Concerning Modern Nanometer MOSFETs

Published on November 4, 2009 at 6:29 PM

Research and Markets, the leading source for international market research and market data, has announced the addition of Pan Stanford Publishing Pte. Ltd.'s new report "Nanometer CMOS" to their offering.

This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented.

An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.

Readership: Graduates and postgraduate students, researchers, engineers and managers in the fields of electrical & electronic engineering and nanoelectronics & microelectronics.

Key Topics Covered:

Evolution and Recent Advances in Si Electronics
MOSFET Fundamentals, Theory, and Modeling
Nanometer MOSFETs
RF MOSFETs
Overview of Nanometer CMOS Technology
Challenges of Giga-Scale Integration

For more information visit http://www.researchandmarkets.com/research/f10c57/nanometer_cmos

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