AIXTRON AG today announced
an order from its long-time customer, Fraunhofer Institute for Applied Solid
State Physics (IAF) located in Freiburg, Germany. IAF has ordered one AIX 2800G4
HT, 11x4 inch MOCVD tool which it will be using for GaN on SiC for high power,
high frequency applications to enable commercialization of GaN devices in the
near future.
The IAF placed its order in the fourth quarter of 2009 and AIXTRON’s
support team will install and commission the new reactor at their laboratory
in the third quarter of 2010.
Dr. Klaus Koehler, Deputy Dept. Head of IAF's Epitaxy Group comments, “We
have already made a good start on the development of GaN on SiC transistors
on our existing AIXTRON reactors. However, we now need to significantly expand
our capabilities. The new reactor will be used for the growth of AlGaN/GaN based
HEMT (High Electron Mobility Transistor) structures on 4 inch semi-insulating
SiC substrates. With this new system we will achieve the highest uniformity
and crystal quality which is necessary for the fabrication of AlGaN/GaN based
power amplifiers and MMICs.
The AIX 2800G4 HT will enable us to readily scale up to 11x4 inch wafers and
to 6x6 inch at a future point. It has all the characteristics we need such as
uniformity and efficiency in a production setting as required for GaN on SiC
transistors for high power, high frequency commercial applications. In addition,
it has the scope to provide us with a GaN on Si epiwafer capability should the
application require that.”
Dr. Frank Schulte, Vice President of AIXTRON Europe adds, “The long-standing
fruitful scientific cooperation with the IAF will have taken another key step
when the AIX 2800G4 HT is delivered later this year. The system will enable
them to further optimize the performance and process technology of these devices.”