16 papers with imec authors
were accepted for IEEE International Electron Devices Meeting (IEDM), December
6-8, 2010, in San Francisco. Both ITRS-related as well as More-than-Moore-related
research papers have been accepted, rewarding imec’s multidisciplinary
R&D platform (featuring two state-of-the-art R&D fabs).
With 11 papers on ITRS scaling topics, imec will discuss a significant contribution
to the fundamental understanding on the switching behavior and operation in
advanced memory concepts (i.e. resistive RAM (RRAM) devices), among other topics.
This has been achieved by applying imec’s longstanding expertise in logic
MOS and high-k/metal gate reliability. It demonstrates the power of leveraging
expertise from various domains in a flexible manner.
A 2nd highlight demonstrates imec’s continued progress on 3D-through-silicon
via (TSV) technology, which is at the forefront of new and enabling ITRS technologies.
The paper reports important characterization data of a two-die stacked device
combining TSV with high-k/metal gate devices.
In addition, 5 More-than-Moore related topics will be presented at IEDM, covering
GaN technology, Si high-voltage devices and MEMS technologies. One particular
result is the realization of a high performance MEMS device together with one
of our industrial core partners. Imec’s MEMS R&D expertise was applied
to provide an industry-relevant solution.