KLA-Tencor has introduced the eDR 7000, an electron-beam (e-beam) wafer defect review system, for allowing chip production at the 20nm device nodes or less.
The tool features ensure high level of throughput and sensitivity and allows defect imaging as well as overcomes classification challenges for today’s level of technological advancements, where yield-killing faults may be as minute as 10nm, or may be present at the bottom of a deep hole or trench. The eDR-7000 consistently identifies faults with respect to wafer defect inspection systems’ sensitivity thresholds made particularly for the 20nm node. The patterned wafer inspection series include the Surfscan SP3, launched last month, and KLA-Tencor's forthcoming models.
The eDR-7000 system includes several advanced features to improve its capabilities when compared to the present-generation eDR-5210 system. It incorporates field-tested, third-generation e-beam immersion column that enables superior resolution and advanced topographic imaging. It has improved vibration-isolation and stage system for rendering a three-fold advancement in coordinate precision and allowing up to a four-fold improvement in the speed of defect reviewing.
This system features significantly advanced sensitivity for bare wafer defects that include enrichment to the analysis of energy-dispersive x-ray (EDX) composition. It incorporates novel reticle defect review mode for enabling quicker investigation of wafer sites on which the defects may be printed. It allows process window characterization at a considerably increased throughput. It also features voltage-contrast imaging mode for favoring e-beam wafer inspection’s information review and has the capability of offline defect classification to enhance its application for imaging work. Several manufacturers including equipment, foundry, memory, and logic have placed orders for eDR-7000 systems.