TESCAN has unveiled a high-resolution Schottky Field Emission scanning electron microscope called the FERA3 XMH with a built-in xenon plasma source-based focused ion beam (FIB).
TESCAN has developed the FERA3 XMH in partnership with Orsay Physics, a company based in France. Besides ion and electron columns, the FERA3 XMH Plasma FIB-FESEM can be used with nano-manipulators, gas injection systems and various other detectors such as cathodoluminescence detector, EBSD and EDX microanalyzers, secondary ion detector, BSE detector and SE detector.
The utilization of a xenon plasma source-based focused ion beam enables the FERA3 to meet ultra-resolution FIB needs such as fine milling/polishing and imaging, and obtaining high ion currents required for ultra-quick material removal rates. The optimal xenon ion current is greater than 1 µA and the plasma ion beam’s resolution is less than 100 nm.
The Plasma FIB offers 30 times quicker material removal rate for silicon than that of the current FIB technologies based on gallium sources. This capability makes the FERA 3 XMH ideal for applications demanding the elimination of huge volumes of material such as the semiconductor packaging corridor that uses the TSV technology.
The first system will be delivered to the MiQro Innovation Collaborative Centre located in Canada this year for the examination of IC packaging. The FERA 3 FIB-SEM systems feature both focused ion beam and electron beam, thus customers can also get the advantages of electron beam analysis and classification. These systems are suitable for applications such as failure analysis, defect analysis, three-dimensional metrology and circuit edit.
Source: http://www.tescan.com