May 21 2013
SanDisk Corporation, a global leader in flash memory storage solutions, today announced it has begun customer sampling of flash memory products based on its industry-leading 1Ynm process technology, which represents its second generation 19 nanometer (nm) manufacturing technology.
SanDisk’s achievement of this breakthrough in semiconductor manufacturing takes its memory cell size from 19nm-by-26nm to 19nm-by-19.5nm, delivering a 25 percent reduction of the memory cell area and allowing SanDisk to continue leading the industry in building smaller, more powerful flash memory products.
SanDisk’s second-generation 19nm memory die uses the most sophisticated flash memory technology node to-date, including advanced process innovations and cell-design solutions. SanDisk's All-Bit-Line (ABL) architecture with proprietary programming algorithms and multi-level data storage management schemes help yield multi-level cell (MLC) NAND flash memory chips that do not sacrifice performance or reliability. In addition, SanDisk’s three bits per cell X3 technology, implemented in the second-generation 19nm node will deliver the lowest-cost flash solutions to address multiple growing end-markets for flash memory.
SanDisk’s latest breakthrough in shrinking the circuitry used in flash memory chips allows higher capacity products and lower cost manufacturing techniques to be employed when creating SanDisk’s flash memory solutions. Consumers and businesses worldwide will benefit from this new advanced manufacturing technology by having access to higher capacity and smaller-sized flash memory chips from SanDisk for mobile phones, tablets, Solid State Drives (SSDs) for client and enterprise markets, and consumer products.
Source: http://www.sandisk.com