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Published on June 5, 2014 at 6:17 AM

ActLight SA and A*STAR Institute of Microelectronics (IME) of Singapore have successfully built the "Dynamic Photodiode" using A*STAR IME's photonics technology. ActLight's patented Dynamic Photodiode technology introduces a new way of using a photodiode providing advantages such as high output signal and low noise. Due to its high internal gain the Dynamic Photodiode eliminates the need for any amplifier and can interact directly with CMOS circuits.

Dynamic Photodiodes built with silicon photonics technology

ActLight and A*STAR IME have been collaborating for 18 months to co-develop a prototype of ActLight's Dynamic Photodiode implemented on A*STAR IME's established silicon photonics technology.

In parallel, ActLight has validated their technology by using a standard CMOS process with excellent results that confirms the advantages of ActLight's Dynamic Photodiode implemented with today's standard CMOS technologies.

This co-developed photodiode represents an ideal solution for companies that want to implement a low power, sensitive and easy to integrate photo detector for applications in mobile devices, medtech, data communication, etc.

"Our Dynamic Photodiode has applications in proximity sensors, gesture control sensors, and in the futurelight data transfer and 3D cameras," said Dr. Serguei Okhonin, ActLight CEO. "Leveraging this breakthrough and proprietary technology, ActLight sees potential for explosive growth in different verticals such as mobile technology and medtech. We see considerable interest from industry for our innovation."

"A*STAR IME is pleased to share our R&D expertise with ActLight and contribute to the success of this collaboration through our deepened capabilities in silicon photonics," said Prof Dim-Lee Kwong, Executive Director of A*STAR IME. "Our synergistic efforts will continue to drive innovative solutions in the field of advanced microelectronics especially as the industry progresses towards heightened performance and increased energy efficiency in semiconductor devices."

Source: http://act-light.com

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