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Results 1 - 10 of 25 for AlGaN.

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Spectroscopic Ellipsometry of Compound Semiconductors AlxGa1-xN / GaN Hetero-Structures Using Equipment from Horiba Scientific - Thin Film

Spectroscopic Ellipsometry is a non-destructive optical characterization method that allows determination of material parameters like layer thickness and optical properties

http://www.azonano.com/article.aspx?ArticleID=2165 | 21 May 2008
Improving Thick AlN Layers Deposited via Hydride Vapor-Phase Epitaxy (HVPE) on Off-Axis 6H-SiC Substrates by Oxford Instruments Plasma Technology

At Oxford Instruments Plasma Technology ave recently optimized the growth procedure to improve structural properties and surface morphology of thick AlN layers deposited via hydride vapor-phase...

http://www.azonano.com/article.aspx?ArticleID=2715 | 27 Oct 2010
kSA MOS Ultra-Scan Flexible, High-Resolution Scanning Curvature And Stress Measurement System From k-Space Associates

The kSA MOS Ultra-Scan is a flexible, high-resolution scanning curvature and stress measurement system. Based on proven kSA MOS technology, this fully integrated ex-situ tool maps the curvature of...

http://www.azonano.com/article.aspx?ArticleID=1498 | 8 Feb 2006
Using LayTec's EpiCurve TT HR Sensor to Monitor Composition of AlGaN and InAlGaN Barrier Layers

At Ferdinand-Braun-Institute (FBH) in Berlin LayTec's EpiCurve®TT HR (High Resolution) sensor is successfully used to optimise the external quantum efficiency and the emission wavelength...

http://www.azonano.com/news.aspx?newsID=7354 | 28 Aug 2008
Imec Reports Ultra-Thin Solar Blind EUV Imager

Today at the International Electron Devices Meeting in San Francisco imec presents an ultra-thin hybrid AlGaN-on-Si-based extreme ultraviolet (EUV) imager with only 10µm pixel-to-pixel pitch. The...

http://www.azonano.com/news.aspx?newsID=20849 | 7 Dec 2010
LayTec EpiCurve Metrology System Used to Develop New Growth Rate Method for AlN Layers

At the International Workshop on Nitride Semiconductors (IWN) in Switzerland on 6–10 October, Prof. Misaichi Takeuchi of the Ritsumeikan University, Japan, presented in-situ curvature...

http://www.azonano.com/news.aspx?newsID=8422 | 31 Oct 2008
Researchers Break World Record for the Switching Speed of Nitride-Based Transistors

Our society is insatiable as far as the transfer of data is concerned. Consequently, increasingly faster and cheaper transistors are being developed. In row in recent months, researchers from...

http://www.azonano.com/news.aspx?newsID=13584 | 10 Sep 2009
Milestone Towards Fabricating Low-Cost GaN Power Devices

IMEC, Europe's leading independent research center in the field of nanoelectronics, and AIXTRON, the world leader in metal-organic chemical-vapor deposition (MOCVD) equipment, have...

http://www.azonano.com/news.aspx?newsID=9346 | 8 Jan 2009
IMEC and AIXTRON Demonstrate Milestone Towards Fabricating Low Cost GaN Power Devices

IMEC, Europe's leading independent research center in the field of nanoelectronics, and AIXTRON, the world leader in metal-organic chemical-vapor deposition (MOCVD) equipment, have demonstrated...

http://www.azonano.com/news.aspx?newsID=6527 | 4 Jun 2008
Patents Awarded for Innovative Semiconductor Production Equipment for the Manufacturing of Low Defect Nitride Semiconductor Materials

Technologies and Devices International, Inc. (TDI), a privately held Maryland corporation, announced today that it has been awarded a United States Patent, US 7,279,047 B2, the latest in a series of...

http://www.azonano.com/news.aspx?newsID=5383 | 23 Nov 2007

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