Article - 9 Mar 2005
Energy conversion efficiency rates of solar cells could be improved by the application of nanomaterials and nanotechnologies. On top of looking at materials systems and techniques for improving solar...
News - 23 Oct 2008
Green-blue- violet light emitters based on III-nitride compounds are typically
fabricated utilizing InGaN alloys in active region of the optoelectronic devices.
Most of these materials are...
News - 28 Oct 2013
Did you know that crystals form the basis for the penetrating icy blue glare of car headlights and could be fundamental to the future in solar energy technology?
Crystals are at the heart...
News - 27 May 2013
From the high-resolution glow of flat screen televisions to light bulbs that last for years, light-emitting diodes (LEDs) continue to transform technology. The celebrated efficiency and versatility...
This video made by Merkator for RUSNANO shows the ultrabright nano-heterostructured LEDs (light-emitting diodes). Optogan produces LED chips, lamps as well as lighting systems with high performance.
News - 2 Feb 2010
AIXTRON AG announced
today that in the third quarter of 2009 Formosa Epitaxy Inc. 'FOREPI',
based in Lung-Tan, Taoyuan, Taiwan, placed an order for multiple MOCVD reactors
which will be...
News - 19 Jun 2012
By Will Soutter
Researchers believe that indium gallium nitride, part of III-nitrides family, is an ideal material for photovoltaic applications because by altering indium concentration the...
News - 20 Jun 2011
By Cameron Chai
Physicists from National Tsing-Hua University in Hsinchu,Taiwan have created light-emitting diodes (LEDs) at nanoscale dimensions that release light across the visible spectrum....
News - 12 Oct 2010
AIXTRON AG today announced
that in the second quarter of 2010, Formosa Epitaxy Inc. (FOREPI), placed an
order for a 56x2-inch AIX G5 HT MOCVD reactor which will be used for ultra-high...
News - 28 Apr 2009
is happy to announce the sale of an EpiCurve®TT system to the Technical
University of Braunschweig, Germany. The tool will be used by the group of Prof.
A. Hangleiter for R+D of GaN...