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Spinnaker Semiconductor has reengineered traditional MOSFET source/drain structures. Using metal silicides to form Schottky barrier junctions rather than diffusion junctions, Spinnaker has created a more reliable, higher performance and easier to manufacture CMOS process. Attributes of this process include: higher clock rates, lower power, elimination of latch-up, reduction/elimination of single event upsets and improved matching and noise characteristics.
Additionally, the Spinnaker CMOS process is scalable to 20 nm and beyond without need of extraordinary modifications to the manufacturing flow.