GaN on SiC RF devices are becoming increasingly important to realise the efficient high frequency devices required for today’s communications. The material properties of GaN meaning that it is especially well suited for high switching speeds at high power.
One of the key features is the AlGaN/GaN 2DEG which has a high electron density; the structure of the device relative to this requires highly accurate material processing to control the device characteristics.
Precise plasma processing provides the accuracy needed for building these devices from Atomic Layer Deposition (ALD) of passivation and gate dielectrics to Inductively Coupled Plasma (ICP) etching of thin GaN based films. Without this knowledge, the performance and lifetime of the device will be compromised.
Improvements in the performance and manufacturing efficiency of the GaN RF devices will help with their widespread adoption; plasma processing has a huge part to play in both of these. Oxford Instruments Plasma Technology has extensive experience in the manufacture of compound semiconductor devices and the right tool set for the plasma requirements of GaN devices.
The Authors would like to thank the Researchers at Hong Kong University of Science and Technology (HKUST), UC San Diego and UC Santa Barbara for their relevant work using Oxford Instruments ALD equipment.
This information has been sourced, reviewed and adapted from materials provided by Oxford Instruments Plasma Technology.
For more information on this source, please visit Oxford Instruments Plasma Technology.