Plasma Processing: The Essential Steps for High Performance GaN RF Devices

GaN on SiC RF devices are becoming increasingly important to realise the efficient high frequency devices required for today’s communications. The material properties of GaN meaning that it is especially well suited for high switching speeds at high power.

One of the key features is the AlGaN/GaN 2DEG which has a high electron density; the structure of the device relative to this requires highly accurate material processing to control the device characteristics.

Precise plasma processing provides the accuracy needed for building these devices from Atomic Layer Deposition (ALD) of passivation and gate dielectrics to Inductively Coupled Plasma (ICP) etching of thin GaN based films. Without this knowledge, the performance and lifetime of the device will be compromised.

Improvements in the performance and manufacturing efficiency of the GaN RF devices will help with their widespread adoption; plasma processing has a huge part to play in both of these. Oxford Instruments Plasma Technology has extensive experience in the manufacture of compound semiconductor devices and the right tool set for the plasma requirements of GaN devices.

Acknowledgements

The Authors would like to thank the Researchers at Hong Kong University of Science and Technology (HKUST), UC San Diego and UC Santa Barbara for their relevant work using Oxford Instruments ALD equipment.

This information has been sourced, reviewed and adapted from materials provided by Oxford Instruments Plasma Technology.

For more information on this source, please visit Oxford Instruments Plasma Technology.

Citations

Please use one of the following formats to cite this article in your essay, paper or report:

  • APA

    Oxford Instruments Plasma Technology. (2019, July 09). Plasma Processing: The Essential Steps for High Performance GaN RF Devices. AZoNano. Retrieved on July 15, 2019 from https://www.azonano.com/article.aspx?ArticleID=4581.

  • MLA

    Oxford Instruments Plasma Technology. "Plasma Processing: The Essential Steps for High Performance GaN RF Devices". AZoNano. 15 July 2019. <https://www.azonano.com/article.aspx?ArticleID=4581>.

  • Chicago

    Oxford Instruments Plasma Technology. "Plasma Processing: The Essential Steps for High Performance GaN RF Devices". AZoNano. https://www.azonano.com/article.aspx?ArticleID=4581. (accessed July 15, 2019).

  • Harvard

    Oxford Instruments Plasma Technology. 2019. Plasma Processing: The Essential Steps for High Performance GaN RF Devices. AZoNano, viewed 15 July 2019, https://www.azonano.com/article.aspx?ArticleID=4581.

Ask A Question

Do you have a question you'd like to ask regarding this article?

Leave your feedback
Submit