High performance CVD system: Nanofab

The Nanofab® system from Oxford Instruments Plasma Technology provides high-performance growth of nanomaterials with rigorous process control and in-situ catalyst activation.

  • Cold wall design with showerhead-based uniform precursor delivery
  • Variable sample sizes from small pieces up to a maximum of 200 mm wafers
  • Processes for nanomaterials: 1D and 2D nanostructures
  • Vacuum load lock for fast sample exchange
  • Excellent temperature uniformity
  • Includes two plasma enhancement options: In chamber (CCP) or remote plasma (ICP)
  • Liquid/solid source delivery system option for growth of MoS2, MoSe2 and other TMDCs
  • Numerous view ports for in-situ characterization (Ellipsometry, OES, etc.)
  • Options of a 700°C, 800°C or 1200°C table

Nanofab System Features

Table Size Up to 200 mm wafer Table Temperature Range Up to 1200°C
Load lock Installed O2 atmosphere compatibility (<400°C) Compatible
Liquid Precursor Compatibility Compatible O2 atmosphere compatibility (>400°C) Non-Compatible
Generator Frequency Range RF (13.56 MHz), LF (50 - 460 KHz) Extra power supply for installation Required
General PECVD Process Oxide, Nitride, Oxynitride, a-Si Extra gasline for installation Required
Catalyst Pretreatment Capable Process for Nanomaterials Carbon Nanotubes, Si Nanowires

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