The VOYAGER™ is designed for all industrial and academic electron beam lithography applications where the vital objectives are high write throughput and maximum resolution.
As well as the newly developed, ground-breaking eWRITE system architecture, Raith attaches a lot of importance to a satisfying price/performance ratio all through the lifetime of the system.
The software and hardware has been stably designed for automated exposure functions. The advanced high-performance pattern generator and the electron optics have been perfectly aligned.
Samples of up to eight inches are revealed at high speed. The required system stability is ensured, even in tough environments, by a thermally stabilized and environmentally tolerant housing.
VOYAGER Product Details
- High-speed direct write
- Anti-counterfeiting security elements
- Diffractive optical elements
- Batch compound semiconductor devices manufacturing
- Large Z travel
- 6” full travel
Unique Writing Mode:
With it’s innovative architecture VOYAGER allows for a cost-effective "through-the-wall-loading” setup of the e-beam writer.
Ultra High Resolution Lithography System
- Reliable speed from first design to finished sample
- Smart design: small system footprint and enclosed environment
- Innovative and future safe system architecture
- Excellent cost of ownership for dedicated Electron Beam Lithography writing with a speed of over 1 cm²/h
Raith´s new eWrite technology integrates dedicated electron beam lithography optics with a novel pattern generator design. This technology is ideal for all jobs in R&D as well as for batch production.
- Sub-7 nm lines in HSQ (Image Credits: Raith GmbH, Dortmund)
- 150 nm gate in PMMA (bi-layer) (Image Credits: Raith GmbH, Dortmund)
- Center of a 1x1 cm² Fresnel lenses in SU-8 written in 53 minutes (Image Credits: Raith GmbH, Dortmund)
- Photonic crystal waveguide in ZEP520a (Image Credits: Thomas Krauss, University of York)
- 1x1 cm² grating in ZEP520a in less than two hours (Image Credits: Raith GmbH, Dortmund)
- Automatic switch between high throughput and high resolution mode (160 µm at 40 nA and 10 nm at 0.4 nA)