OkyayTech’s Atomry® Thermal ALD System is provided with a stainless steel reactor chamber with substrate sizes of 100, 200, and 300 mm.
The system includes up to eight precursor lines that can be individually heated up to a temperature of 200 °C. It also includes MFC-controlled purge/carrier gas, heated gas manifold and delivery lines, GUI/recipe-controlled isolation valve, solid/liquid/gas precursors delivery.
The Atomry® Thermal ALD System provides temperatures of up to 250 °C standard (optionally up to 400 °C).
- Completely automated with recipe control
- User-friendly GUI
- 3D Surround Coat™ with high aspect ratio for coatings with a high surface area
- Top-notch scientific support team and recipe library
Lid for standard substrate sizes. Image Credit: OkyayTech
- In-situ ellipsometer process development kit
- In-situ QCM thickness monitor
- 10-wafer and 25-wafer cassette batch process
Optical lid for in-situ ellipsometry. Image Credit: OkyayTech
- Ozone process with ozone generator (GUI/recipe integration)
- H2S kit for 2D materials research
- RF substrate biasing
Dome lid for non-standard substrate sizes. Image Credit: OkyayTech
- Glovebox integration kit
- Active cooling kit
Self-limiting and high growth-rate ALD of Al2O3 films can be performed in the temperature range of 100 °C–225 °C.
The system enables a better than 1% uniformity of the thickness of Al2O3 film on wafers with a size of 200 mm.
The Atomry® system was used to achieve an almost perfect linearity performance, for growth cycles that vary from 5 to 500 cycles, at 200 °C. Carbon-free chemistry and a refractive index of over 1.6 are both clearly indicators of dense film growth and high quality. Moreover, a <1% six-sigma film uniformity is achieved for wafers with diameters of up to 200 mm.
A relatively constant GPC was realized in the temperature range of 100 °C to 225 °C, thereby representing the best-suited ALD window with an excellent GPC value of more than 1.29 Å/cycle.
Image Credit: OkyayTech