Posted in | Nanolithography

SEMATECH, KLA-Tencor Collaborate to Develop EUV Lithography Technology for Mass Production

KLA-Tencor and SEMATECH declared the joining of KLA-Tencor as a member in the Lithography Defect Reduction program of SEMATECH at the University at Albany’s College of Nanoscale Science and Engineering (CNSE).

As a member, KLA-Tencor will partner with SEMATECH in certain areas such as identification and elimination of defect sources by utilizing advanced metrology, characterization and printability processes to enhance metrology source development, mask metrology infrastructure and entire EUV production and advancement.

EUV lithography is a process in which a source wavelength 15 times shorter than that of existing lithography systems is used. It allows scaling of semiconductors to resolutions of 10 nm and below. A low defect density is required for sophisticated lithography methods and for introducing EUV lithography technology into mass production, which is expected to be launched for the 22-nm half-pitch node in 2012-2013 at major integrated circuit producers facilities.

To make the EUV lithography ready for volume production, a rigorous effort needs to be taken on source development, mask metrology infrastructure, defect reduction, entire manufacturability and extendibility.

The President and Chief Executive Officer at KLA-Tencor, Rick Wallace stated that the collaboration of KLA-Tencor's advanced lithography testing and measurement tools with SEMATECH’s expertise in EUV will offer critical solutions to the company’s customers and the industry. The company is happy about the collaboration with SEMATECH to design advanced metrology solutions that can tackle the basic defect identification and reduction methods, which are important for EUV infrastructure, he added.

According to the President and Chief Executive Officer at SEMATECH, Dan Armbrust, the collaboration with KLA-Tencor will support SEMATECH’s ability to tackle the EUV lithography challenges.


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