Posted in | News | Graphene

Quantum Properties of Bilayer Graphene May be Harnessed to Create New Quantum Field Effect Transistor

A team at the National Institute of Standards and Technology (NIST) has discovered that electronic traits of two grapheme layers differ on the nano scale.

The results show that not the difference in the electric charges strength between the two layers differ over the layers, but they also reverse in direction to develop random puddles of positive and negative charges. The research paper has been published in Nature Physics, and reveals that the development could help utilize grapheme in consumer electronic devices.

Graphene layers with insulating substrate causes electrons (red) and electron holes (blue) to collect in puddles

NIST researcher Nikolai Zhitenev says variations in the graphene’s electrical potential could voluntarily cause band gaps due to communication between the graphene electrons or with the substrate the graphene is placed upon.

According to NIST fellow Joseph Stroscio, the measurements show that interactions between random insulating substrate leads to puddles of electrons and electron holes in the graphene layers. Both are of at a greater depth on the lowest layer due to its proximity to the substrate. This difference in pool depths between the layers leads to random alternating charges and the spatially differing band gap. Controlling the substrate purity could allow the team to monitor the band gap and help develop graphene-based transistors that can be switched on or off like a semi-conductor.

Stroscio says that if the substrate communication could be minimized, quantum properties of bilayer graphene could be used to develop a quantum field effect transistor.

Source: http://www.nist.edu

Citations

Please use one of the following formats to cite this article in your essay, paper or report:

  • APA

    National Institute of Standards and Tech (NIST). (2019, February 12). Quantum Properties of Bilayer Graphene May be Harnessed to Create New Quantum Field Effect Transistor. AZoNano. Retrieved on April 16, 2024 from https://www.azonano.com/news.aspx?newsID=22342.

  • MLA

    National Institute of Standards and Tech (NIST). "Quantum Properties of Bilayer Graphene May be Harnessed to Create New Quantum Field Effect Transistor". AZoNano. 16 April 2024. <https://www.azonano.com/news.aspx?newsID=22342>.

  • Chicago

    National Institute of Standards and Tech (NIST). "Quantum Properties of Bilayer Graphene May be Harnessed to Create New Quantum Field Effect Transistor". AZoNano. https://www.azonano.com/news.aspx?newsID=22342. (accessed April 16, 2024).

  • Harvard

    National Institute of Standards and Tech (NIST). 2019. Quantum Properties of Bilayer Graphene May be Harnessed to Create New Quantum Field Effect Transistor. AZoNano, viewed 16 April 2024, https://www.azonano.com/news.aspx?newsID=22342.

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Your comment type
Submit

While we only use edited and approved content for Azthena answers, it may on occasions provide incorrect responses. Please confirm any data provided with the related suppliers or authors. We do not provide medical advice, if you search for medical information you must always consult a medical professional before acting on any information provided.

Your questions, but not your email details will be shared with OpenAI and retained for 30 days in accordance with their privacy principles.

Please do not ask questions that use sensitive or confidential information.

Read the full Terms & Conditions.