News - 9 Dec 2008
ATMI, Inc. (Nasdaq:ATMI) and Ovonyx, Inc., today announced that the companies successfully demonstrated Germanium Antimony Telluride (GST) -based Phase Change Memory (PCM) devices made with Chemical...
Article - 4 May 2013
Metal alkyl amides are important as single source CVD precursors for nitride thin films.
News - 29 Jun 2011
A group of Stanford University scientists have developed nanoscale variants of two advanced memory technologies from carbon nanotubes.
Generally, silicon memory chips won’t work at...
News - 5 Jun 2010
Air Products (NYSE: APD) today introduced its new EXTREMA STO and GST precursors in support of continued advancements in Dynamic Random Access Memory (DRAM) and Phase-change Random Access Memory...
News - 26 Jan 2010
Not every object is food to a Venus flytrap. Like the carnivorous plant, a new material developed at Northwestern University permanently traps only its desired prey, the radioactive ion cesium, and...
News - 15 Oct 2009
MIT physicist Pablo Jarillo-Herrero has won a 2009 David and Lucile Packard Fellowship, an award he will use to study a new class of materials that could have applications in the semiconductor...
News - 15 Jul 2009
SAFC Hitech, a business segment within SAFC , a member of the Sigma-Aldrich Group, today announced details of its new materials roadmap for Metalorganic Chemical Vapor Deposition (MOCVD) and Atomic...
News - 12 Feb 2009
An international research team has succeeded in gaining an in-depth insight into an unusual phenomenon, as reported in the current edition of the high-impact journal "Science". The...
News - 4 Sep 2008
SAFC Hitech(TM), a focus area within SAFC(R), a member of the Sigma-Aldrich Group (Nasdaq: SIAL), today announced that it has made significant progress in developing Germanium Antimony Telluride...
News - 21 Apr 2008
GMZ Energy has announced the availability of a breakthrough material designed for a new generation of cleaner, more energy-efficient products. The new thermoelectric material, nanotechnology-based and...