News - 29 Jul 2009
ASM International N.V. (NASDAQ: ASMI and Euronext Amsterdam: ASM), today announced that it has sold its Pulsar® Atomic Layer Deposition (ALD) system for high-k gates to two top Japanese logic...
News - 6 Jan 2009
ASM International N.V. (Nasdaq: ASMI; Euronext Exchange in Amsterdam: ASM) and SAFC Hitech(TM), a business segment within SAFC(R), a member of the Sigma-Aldrich(R) Group (Nasdaq: SIAL), today...
Article - 4 May 2013
Cyclopentadienyl (Cp) complexes have become attractive precursors for CVD/ALD as they are normally volatile and reactive towards water at considerable .
Article - 21 Nov 2012
The demand for smaller devices with better performance has driven the development of carbon nanotube-based chips, which open up exciting possibilities for the semiconductor industry.
News - 3 May 2012
Nanobiotix, a company developing novel cancer nanotherapeutics, and Thomas Jefferson University, one of Philadelphia's premier medical and health sciences universities, today announced that they have...
News - 8 Dec 2011
New three-dimensional transistors made from tiny indium-gallium-arsenide nanowires can help engineers design lighter laptops and more efficient, compact and faster integrated circuits.
News - 17 Sep 2011
The medicine agency of France, AFSSAPS has approved the commencement of the first clinical trial of NBTXR3, the lead compound in the NanoXray pipeline of Nanabiotix.
Under the first phase of the...
News - 25 Apr 2011
Applied Seals North America has launched an applications and design facility at its headquarters located in Silicon Valley. The center will enable the company to address customer issues with seals,...
News - 8 Dec 2009
Applied Materials, Inc. announced today that STMicroelectronics (ST), a leading semiconductor manufacturer, has selected Applied Materials' high-k/metal gate (HKMG) technology for the production...
News - 18 Jun 2008
At today's VLSI Symposium, IMEC reports an improved performance for its planar CMOS using hafnium-based high-k dielectrics and tantalum-based metal gates for the 32nm CMOS node. The inverter delay...