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Results 21 - 30 of 116 for Molecular beam epitaxy
  • Supplier Profile
    Asylum Research is the technology leader in atomic force probe microscopy (AFM) for both materials and bioscience applications.  Founded in 1999, we are dedicated to innovative instrumentation...
  • Supplier Profile
    More than 25 years ago, the foundations of Park Systems were laid at Stanford University, where Dr. Sang-il Park, the founder of Park Systems, worked at Prof. Quate’s group that invented the...
  • Supplier Profile
    Founded in 1989, Digital Surf is a leading provider of innovative solutions for micro and nano-surface metrology for use in research laboratory, industrial and production environments. Our company is...
  • Article - 1 May 2008
    Veeco has been and continues to be the world’s leading supplier of MBE components
  • Equipment
    Hiden Analytical’s HALO 201 MBE is a gas analysis system for molecular beam epitaxy applications. The HALO systems have been designed for RGA, gas analysis, and process monitoring applications.
  • Article - 7 Jan 2004
    Engineers at Ohio State University have overcome a major barrier in the manufacture of high quality light emitting devices and solar cell materials. Posted December 2 2003
  • Supplier Profile
    Applied Optoelectronics, Inc. (AOI) develops and manufactures advanced semiconductor laser transmitters and receivers. These products are used in the Fiber to the Home, telecommunications,...
  • Supplier Profile
    The "Centre d’Élaboration de Matériaux et d’Etudes Structurales" (CEMES/CNRS) is a CNRS laboratory (UPR 8011) associated with Université Paul Sabatier de Toulouse...
  • Supplier Profile
    nanoTherics aims to become the leading supplier of IP protected products addressing the field of magnetic nanoparticle research and applications. They are focused on supplying products for...
  • News - 26 Jul 2022
    2H phase stabilization in molybdenum telluride (MoTe2) during molecular beam epitaxy growth on 6H-silicon carbide (SiC) (0001) is desirable to leverage its potential properties in electronic...