Focused Ion Beam (FIB) Systems RSS Feed - Focused Ion Beam (FIB) Systems

Focused Ion Beam (FIB) systems utilize a finely focused beam of gallium ions operated at low-beam currents for imaging and at high-beam currents for site-specific milling. Their versatility makes them popular for a wide variety of applications including advanced circuit edit, and revealing below-the-surface defects in advanced materials and devices.
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AURIGA™ the new CrossBeam® Workstation (FIB-SEM) from Carl Zeiss SMT exactly delivers all this - on a nanoscopic scale. Using the best-in-class FIB column and the proprietary GEMINI e-Beam column from Carl Zeiss, together with a completely new designed vacuum chamber for advanced analytics, AURIGA™ assists you in obtaining the maximum information possible out of your sample.
The FB2200 enables quick and accurate specimen preparation for both scanning and electron microscopy of semiconductors and other advanced materials. Using a new low aberration ion optical system enables a maximum beam current of 60nA at an accelerating voltage of 40 kV.
The HITACHI NB5000 FIB-SEM combines a superior 40kV Ga ion FIB column with an ultra-high-resolution Schottky FE-SEM.
The Helios PFIB DualBeam™ features FEI's most recent advances in Plasma Focused Ion Beam and field emission SEM (FESEM) technologies and their combined use. FEI's first plasma based DualBeam is designed for high throughput, large volume processing, combined with extreme high resolution imaging in both 2D and 3D.
The V400ACE™ Focused Ion Beam (FIB) system incorporates the latest developments in ion column design, gas delivery and end point detection to provide fast, efficient, cost-effective editing on advanced integrated circuits.