Focused Ion Beam (FIB) Systems

Focused Ion Beam (FIB) systems utilize a finely focused beam of gallium ions operated at low-beam currents for imaging and at high-beam currents for site-specific milling. Their versatility makes them popular for a wide variety of applications including advanced circuit edit, and revealing below-the-surface defects in advanced materials and devices.
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Equipment
The FEI V600CE focused ion beam (FIB) system incorporates the latest developments in ion column design, gas delivery and end point detection to provide fast, efficient, cost-effective editing on advanced integrated circuits at the 65 nm technology node and beyond. The V600CE is specifically designed to meet the challenges of advanced designs and processes: smaller geometries, higher circuit densities, exotic materials and complex interconnect structures.
AURIGA™ the new CrossBeam® Workstation (FIB-SEM) from Carl Zeiss SMT exactly delivers all this - on a nanoscopic scale. Using the best-in-class FIB column and the proprietary GEMINI e-Beam column from Carl Zeiss, together with a completely new designed vacuum chamber for advanced analytics, AURIGA™ assists you in obtaining the maximum information possible out of your sample.
State of the art, bolt-on SIMS probe for integration into your existing UHV surface science chamber from Hiden Analytical.
Hitachi's Focused Ion Beam (FIB) systems deliver quick and accurate sample preparation that is far superior to conventional techniques. The FB-2100 allows rapid and precise specimen preparation for both transmission and scanning electron microscopy of semiconductors and other advanced materials.
The FEI V600FIB is the most efficient, flexible, and cost-effective circuit edit tool available for semiconductor labs. It enables fast, versatile modification and analysis with a single-column, focused ion beam (FIB) that effectively delivers high throughput circuit modification, cross-sectioning, and failure analysis.
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