The eBeam Initiative, a forum dedicated to the education and promotion of
a new design-to-manufacturing approach known as design for e-beam (DFEB), today
announced that six additional companies spanning the entire semiconductor value
chain have joined the Initiative to support the new DFEB mask roadmap for high-volume
applications.
The roadmap incorporates new innovations to e-beam mask making using DFEB in
conjunction with e-beam mask writing equipment currently on the market. Leading
mask manufacturers, mask-writing equipment manufacturers, integrated device
manufacturers (IDMs), foundries, as well as lithography experts, have joined
the 21 founding members. The addition of these new members validates the industry's
support for expanding DFEB's role to enable cost-effective production of complex
photomasks needed for high-volume chip designs at the 22-nm node and beyond.
Extending 193-nm immersion lithography to the 22-nm node has been an incredible
challenge for the semiconductor industry, requiring a number of innovations
that have made it technically feasible but costly as well. The last critical
piece of the puzzle to enabling cost-effective optical lithography at the 22-nm
node turns out to be e-beam mask writing.
New members in the Initiative include: GLOBALFOUNDRIES, JEOL, KLA-Tencor, NuFlare
Technology, Petersen Advanced Lithography (PAL) and Samsung Electronics. CEO
of D2S and managing sponsor of the Initiative, Aki Fujimura, stated, "The
support from all of the Initiative members will enable the cost advantages of
DFEB to be brought to bear on one of the fastest cost growth areas in optical
lithography—the photomask. We are excited about the new member base given
the expertise they bring in mask making, and where DFEB is headed."
"Using DFEB mask technology with 193i lithography is an innovative approach
to a difficult industry problem and I'm delighted to work with other eBeam Initiative
members to implement it," said John S. Petersen, president and chairman
of Petersen Advanced Lithography, Inc. and past fellow of International SEMATECH.
"As we approach the 22-nm logic node, assist feature patterns become more
complex and with this complexity the individual features need to become more
and more curvilinear. But we have to solve the problem of increased mask costs
due to significantly higher e-beam shot counts when using curvilinear assist
features. The DFEB mask technology solves this by taking advantage of the naturally
rounding nature of electron beams to reduce shot count."
Source: http://www.ebeam.org/
Posted February 24th, 2010
