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Posted in | Nanoelectronics

Introduction to Nanoelectronic Single-Electron Circuit Design

Published on November 4, 2009 at 5:21 AM

Research and Markets, the leading source for international market research and market data, has announced the addition of Pan Stanford Publishing Pte. Ltd.'s new report "Introduction to Nanoelectronic Single-Electron Circuit Design" to their offering.

In Introduction to Nanoelectronic Single-electron Circuit Design, single-electron circuits are studied as an introduction to the rapidly expanding field of nanoelectronics.

Reviews:

  • The spectacular evolution of microelectronics has demonstrated the power of the 'circuit paradigm'. During the last decade, a broad class of nanoelectronic discrete devices has been proposed and successfully demonstrated, however, there exist still a gap between device physics and nanoelectronic integrated circuit design.
  • This book offers an insight into an original and outstanding effort to bridge the gap between device physics and engineering of nanoelectronic integrated architectures. Original equivalent circuit models of metallic single-electron tunneling (SET) junctions and efficient analysis and synthesis techniques of nanoelectronic circuits are presented. This book in recommended to researchers and students interested in nanoscience and nanotechnology, especially in nanoelectronics." Arpad I Csurgay Pazmany Peter University, Hungary and University of Notre Dame, USA
  • "Single electron devices are promising candidates for next generation circuits. By clarifying the relationship between models of different levels, this book offers useful knowledge on modeling which makes single electron devices treated the same as conventional transistors during circuit design. The new perspectives involved also help to conceive novel nano-devices. It is a very good reference for researchers who are engaged in this exciting area." Ning Deng Tsinghua University
  • Treated are both the analysis and synthesis of circuits with the nanoelectronic metallic single-electron tunnelling (SET) junction device. The basic physical phenomena under consideration are the quantum mechanical tunnelling of electrons through a small insulating gap between two metal leads, the Coulomb blockade, and Coulomb oscillations - the last two resulting from the quantization of charge. While electron transport in nanoelectronic devices can best be described by quantum physics; nanoelectronic circuits can best be described by Kirchhoff's voltage and current laws.

The author employs an unconventional approach in explaining the operation and design of single-electron circuits. All models and equivalent circuits are derived from first principles of circuit theory. This is a must if we want to understand the characteristics of the nanoelectronic devices and subcircuits. Besides this, a circuit theoretical approach is necessary for considering possible integration in current and future IC technology. Based on energy conservation, in circuit theory connected to Tellegen's theorem, the circuit model for single-electron tunnelling is an impulsive current source. Modelling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a tunnel junction, not of an island.

Readership: Advanced undergraduate- and graduate-level students in electrical engineering, physics, nanotechnology, computer engineering, and mechanical engineering, especially those with an interest in MEMS.

Key Features:

  • The modelling of nanoelectronics and, especially, the analysis and synthesis of circuits including the SET junction device is unique
  • Over 150 figures and tables
  • Extensive in-chapter examples, end-chapter problems
  • Can be used as an advanced graduate textbook on nanoelectronics
  • Author: Jaap Hoekstra (Delft University of Technology, The Netherlands)
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