Important Symposium Exploring Sub-22nm Flash Memory
Published on December 2, 2009 at 8:01 AM
On December 8, in Baltimore, Maryland, Applied Materials, the global leader in Nanomanufacturing Technology™ solutions with a broad portfolio of innovative equipment, service and software products for the fabrication of semiconductor chips, flat panel displays, solar photovoltaic cells, flexible electronics and energy efficient glass., will host an important symposium exploring critical questions surrounding the industry’s capability to deliver the density and performance required to satisfy the ever-growing demand for higher capacity flash memory chips. Can conventional floating-gate technology remain viable beyond 22nm, or will three-dimensional charge trap or nanocrystal cell technology win out? What will these new structures look like and what new processes and materials will be needed to implement them?
Titled “How will NAND Flash Scale Beyond 2X?”, the symposium will feature a stimulating panel discussion with leading technologists from across the flash memory industry. The panel will debate the challenges facing flash scaling and share their vision of how the industry landscape will evolve as we enter a new decade.
- Yoshio Nishi, Stanford University, Moderator
- Hideaki Aochi – Toshiba Corp.
- Seiichi Aritome – Hynix Semiconductor, Inc.
- Siyoung Choi – Samsung Microelectronics, Ltd.
- Kirk Prall – Micron Technology, Inc.
- Hans Stork – Applied Materials