Site Sponsors
  • Oxford Instruments Nanoanalysis - X-Max Large Area Analytical EDS SDD
  • Strem Chemicals - Nanomaterials for R&D
  • Park Systems - Manufacturer of a complete range of AFM solutions
Posted in | Nanoelectronics

Samsung Develops 32GB Memory Module Featuring 40nm 4Gb DDR3 Chips

Published on June 29, 2010 at 6:23 AM

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry's first 32 gigabyte (GB) load-reduced, dual-inline memory module (LRDIMM), for server applications.

Samsung will begin mass producing the 32GB LRDIMM in the second half of this year, giving it the largest family of DRAM offerings in the industry.

Using cutting-edge 40 nanometer-class, four gigabit (4Gb) DDR3 chips, which Samsung introduced earlier this year, the new 32GB LRDIMM accommodates next generation servers designed for virtualization, cloud computing and other high-capacity applications.

“In developing the industry’s first load-reduced module with 40nm-class DDR3 technology, we are underscoring our determination to combine the best of capacity and performance for the newest generation of servers,” said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics.

Samsung’s 32GB LRDIMM prototype consists of 72 4Gb DDR3 chips and an additional memory buffer chip to help reduce the load on the memory subsystem by as much as 75 percent.

By using 32GB LRDIMMs, memory capacity can rise up to 384 gigabytes per CPU. In a two-way server system, capacity can be increased up to 768GB, or about 1.5 times that of a 512GB server system equipped with 32GB DDR3 RDIMMs.

A server equipped with LRDIMMs can process data at 1,333 megabit per second (Mbps), approximately 70 percent faster than the previous speed of 800 Mbps. Samsung’s LRDIMMs operate at 1.35 or 1.5 volts.

Source: http://www.samsung.com/in/

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Submit