Intel and Micron Technology have unveiled the 20nm process technology for producing NAND flash memory.
It delivers an 8GB multi-level cell (MLC) NAND flash product, delivering a high-capacity, nano-factor storage space for music, video and books on smart phones, tablets and solid-state drives (SSDs).
Enhanced data storage and features requires NAND flash technology, such as more capacity in nanostructures. The product measures 118mm2 and allows 30 to 40% less board space. This feature offers efficient system level and helps tablet and smartphone developers to add enhancements such as a large battery, screen or a chip for more features. The joint venture, called IM Flash Technologies (IMFT), has developed the product. Compressing NAND lithography to this node is cost-effective and helps enhance fab yield, with nearly 50% extra capacity.
Glen Hawk, vice president of Micron’s NAND Solutions Group the process will allow cost-effective, value-added solid-state storage solutions.
The device is anticipated to go into mass manufacture in the second half of 2011 by which time the joint venture also anticipates to launch a 16GB product, providing up to 128GBs capacity in a single storage solution.
Source: www.micron.com