At the IWPC Conference on Next Generation Mobile Device Platform Architectures, RFaxis has introduced its latest 28-nm CMOS silicon multi-band/multi-mode RF Front-end Integrated Circuit (RFeIC) branded as the Nano-RFeIC.
The Nano-RFeIC can be deployed and produced in 55/65, 40/45, 32 nm and other commercially feasible submicron CMOS nodes. RFaxis’ Chief Technology Officer, Oleksandr Gorbachov commented that the company’s 28-nm Nano-RFeIC is developed for 5.0 GHz and 2.4 GHz frequency bands to endorse concurrent Bluetooth and WLAN operations.
Gorbachov further said that the Nano-RFeIC, a single chip/single die, is offered with high-efficacy linear power amplifiers, which offer advanced EVM power for transmit operations, CMOS logic control circuitry, impedance matching, harmonic and coexistence filters, true directional couplers, power detection, switching circuitry (band switching, mode and TX/RX and more) and low-noise amplifiers for high receive sensitivity.
The Chairman and Chief Executive Officer at RFaxis, Mike Neshat stated that the selection of the 28-nm CMOS process node can assist the ecosystem to alleviate its existing radiofrequency challenges and to move on into a future-generation ultra low power portable equipment such as mobile internet devices, tablet PCs, smartphones and server-side equipment, including consumer premises equipment.
Neshat further said that like the company’s other products, the Nano-RFeIC products will also suit the requirements of system-in-package companies. In addition, the Nano-RFeIC products now entirely bridge the radiofrequency gap for system-on-chip companies, he added.
Source: http://www.rfaxis.com