Fraunhofer Center Nanoelectronic Technologies (CNT) has joined Dresden and ASELTA Nanographics to develop e-beam proximity effect correction methods for maskless lithography (ML2) and mask writing applications.
The software developed by ASELTA Nanographics helps reduce the time required for manufacturing chips at the 32 nm node and above, and enhances pattern fidelity, including lithography-image quality and cycle time.
ASELTA’s Chief Executive Officer, Dr. Serdar Manakli stated that the company is delighted to join Fraunhofer CNT for the development of the e-beam systems including the validation of e-beam proximity effect correction. Serdar added that the company will concentrate to explore the EUV mask challenges, and through this collaboration they can provide their customers with current equipment having high productivity and increased lifetime.
Fraunhofer CNT’s General Manager of patterning and e-beam, Dr. Christoph Hohle stated that the company’s mission is to join the industrial partners such as ASELTA for the R&D work of the application-ready technology in this field. He added that in addition to the development of e-beam proximity effect corrections for ML2 and mask writing applications, this technology can also be used in the data preparation applications. He concluded that with this joint research, the writing times and proximity effect corrections in the ML2 and sub-30 nm mask writing applications can be addressed with proper solution.
Source: http://www.cnt.fraunhofer.de