By Will Soutter
Samsung Electronics has revealed that mass production of first-of-its-kind 20-nm-class 4 Gb low power double-data-rate 2 (LPDDR2) memory has been started last month.
This 20-nm-class 4 Gb mobile dynamic random access memory (DRAM) chip will help bring faster, lighter, more-advanced devices with longer battery life to the marketplace. Enterprise solution providers and mobile manufacturers can develop advanced systems and ultra-slim mobile designs using this thinner, higher-density and superior-performance mobile memory.
This 4 Gb memory enables Samsung Electronics to deliver 0.8-mm-thick 2 GB solutions that stack four 4 Gb LPDDR2 chips in one LPDDR2 package. The thickness of this new package is 20% lesser than that of 2 GB packages stacking four 30-nm-class 4 Gb LPDDR2 chips. Moreover, the new 2 GB package is capable of processing data as high as 1,066 Mbps for power consumption same as that of the previous 30-nm-class 2 GB package.
Samsung Electronics believes that its 30-nm-class 2 Gb-based 1GB LPDDR2, which was in inadequate supply at a thickness of 0.8 mm will be rapidly replaced by the new 20-nm-class 4Gb LPDDR2. The new 20-nm-class 4 Gb LPDDR2 delivers several other benefits, thus will be helpful in accelerating the market growth of 4 Gb DRAMs. With the volume manufacturing of the 20-nm-class 4 Gb LPDDR2, the company ensures that it has the far-reaching mobile DRAM product range in the marketplace. This comes on the heels of the company’s introduction of first-of-its-kind 20-nm-class 8 GB DDR3 modules for use in notebook PCs in March 2012.
Samsung Electronics’ Executive Vice President of Memory Sales & Marketing, Wanhoon Hong stated that the company anticipates increasing the share of 20-nm-class DRAM in its total DRAM output so that it can reinforce its competitive edge and retain its dominance in the premium market by making the 4 Gb DRAM as the flagship product.